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| AUIRFN7110 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Process Technology | |||
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AUIRFN7110
Thermal Resistance
Symbol
Parameter
Rï±JC (Bottom)
Rï±JC (Top)
Rï±JA
Rï±JA (<10s)
Junction-to-Case ï
Junction-to-Case ï
Junction-to-Ambient ï
Junction-to-Ambient ï
Typ.
âââ
âââ
âââ
âââ
Max.
1.2
32
35
22
Units
°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
100 âââ âââ
âââ 0.09 âââ
âââ 11.5 14.5
VGS(th)
ïVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
2.0 3.0 4.0
âââ -8.4 âââ
âââ âââ 20
âââ âââ 250
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100
Gate-to-Source Reverse Leakage
âââ âââ -100
RG
Gate Resistance
âââ 1.0 âââ
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mï VGS = 10V, ID = 35A ï
V
mV/°C
VDS = VGS, ID = 100µA
µA
VDS = 100V, VGS = 0V
VDS = 100V,VGS = 0V,TJ = 125°C
nA
VGS = 20V
VGS = -20V
ï
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Trans conductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
79 âââ âââ
âââ 49
74
âââ 14 âââ
âââ 12 âââ
âââ 37 âââ
S VDS = 50V, ID = 35A
ID = 35A
VDS = 50V
nC VGS = 10V
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 11 âââ
âââ 23 âââ
âââ 22 âââ
âââ 18 âââ
âââ 3050 âââ
âââ 290 âââ
âââ 101 âââ
VDD = 50V
ns ID = 35A
RG = 1.8ï
VGS = 10V
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
12
27
152
9.8
Max.
58
232
1.3
âââ
âââ
âââ
âââ
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
V TJ = 25°C, IS= 35A, VGS=0V ï
V/ns TJ = 175°C, IS= 35A, VDS = 100V
ns TJ = 25°C, IF = 35A, VDD = 50V
nC di/dt = 500A/µs ï
A
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July 23, 2015
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