IRFS3307PBF Datasheet, PDF (2/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

IRFB/S/SL3307PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
Min. Typ. Max. Units
Conditions
75 ––– –––
––– 0.069 –––
––– 5.0 6.3
V V_GS = 0V, I_D = 250μA
d V/°C Reference to 25°C, I_D = 1mA
g m V_GS = 10V, I_D = 75A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 150μA
––– ––– 20 μA V_DS = 75V, V_GS = 0V
––– ––– 250
V_DS = 75V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 1.5 –––  f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
98
Q_g
Total Gate Charge
–––
Q_gs
Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain ("Miller") Charge
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
h ^{Coss eff. (ER) Effective Output Capacitance (Energy Related) –––}
C_oss eff. (TR) Effective Output Capacitance (Time Related) –––
Typ.
–––
120
35
46
26
120
51
63
5150
460
250
570
700
Max. Units
Conditions
––– S V_DS = 50V, I_D = 75A
180 nC I_D = 75A
–––
–––
g ^{VDS = 60V}
V_GS = 10V
––– ns V_DD = 48V
–––
I_D = 75A
–––
–––
g ^{RG = 3.9}
V_GS = 10V
––– pF V_GS = 0V
–––
V_DS = 50V
–––
ƒ = 1.0MHz
–––
–––
i V_GS = 0V, V_DS = 0V to 60V , See Fig.11
h V_GS = 0V, V_DS = 0V to 60V , See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
dv/dt
Diode Forward Voltage
Peak Diode Recovery
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ––– ––– 130 A MOSFET symbol
D
showing the
––– ––– 510 A integral reverse
G
p-n junction diode.
S
–––
–––
–––
11
1.3
–––
g V T_J = 25°C, I_S = 75A, V_GS = 0V
f V/ns T_J = 175°C, I_S = 75A, V_DS = 75V
––– 38 57 ns T_J = 25°C
V_R = 64V,
––– 46 69
T_J = 125°C
––– 65 98 nC T_J = 25°C
g ^{IF = 75A}
di/dt = 100A/μs
––– 86 130
T_J = 125°C
––– 2.8 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.096mH
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended
R_G = 25, I_AS = 75A, V_GS =10V. Part not recommended for use
above this value.
„ I_SD  75A, di/dt  530A/μs, V_DD V_(BR)DSS, T_J  175°C.
… Pulse width  400μs; duty cycle  2%.
footprint and soldering techniques refer to application note #AN-994.
‰ R_ is measured at T_J approximately 90°C.
Š R_JC (end of life) for D²Pak and TO-262 = 0.75°C/W. Note: This is the
maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
2
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