IRFS3307PBF Datasheet, PDF (1/11 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 95706D
IRFB3307PbF
IRFS3307PbF
IRFSL3307PbF
HEXFET^® Power MOSFET
G
D _VDSS
R_DS(on) typ.
max.
75V
5.0m:
6.3m:
S ^ID
120A
DS
G
TO-220AB
IRFB3307PbF
DS
G
D²Pak
IRFS3307PbF
DS
G
TO-262
IRFSL3307PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
d ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J
T_STG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
e _{EAS (Thermally limited)}
Ù _IAR
Single Pulse Avalanche Energy
Avalanche Current
g _EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_JC
Parameter
k Junction-to-Case
R_CS
R_JA
R_JA
Case-to-Sink, Flat Greased Surface , TO-220
k Junction-to-Ambient, TO-220
jk Junction-to-Ambient (PCB Mount) , D²Pak
Max.
120™l
84™l
510
l 200
l 1.3
± 20
-55 to + 175
300
x x 10lb in (1.1N m)
270
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
l 0.61
–––
62
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
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1
01/20/12