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| IRFB4229PBF Datasheet, PDF (2/8 Pages) International Rectifier – PDP SWITCH | |||
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IRFB4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250 âââ âââ V VGS = 0V, ID = 250µA
âÎVDSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ 210 âââ mV/°C Reference to 25°C, ID = 1mA
âââ 38
e 46 m⦠VGS = 10V, ID = 26A
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.0
V VDS = VGS, ID = 250µA
âVGS(th)/âTJ
Gate Threshold Voltage Coefficient
âââ -14 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 250V, VGS = 0V
âââ âââ 1.0 mA VDS = 250V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
83 âââ âââ
âââ 72 110
S VDS = 25V, ID = 26A
e nC VDD = 125V, ID = 26A, VGS = 10V
Qgd
Gate-to-Drain Charge
âââ 26 âââ
tst
Shoot Through Blocking Time
100 âââ âââ ns VDD = 200V, VGS = 15V, RG= 4.7â¦
EPULSE
Energy per Pulse
âââ 790 âââ
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 200V, RG= 4.7â¦, TJ = 25°C
âââ 1390 âââ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 4.7â¦, TJ = 100°C
Ciss
Input Capacitance
âââ 4560 âââ
VGS = 0V
Coss
Output Capacitance
âââ 390 âââ pF VDS = 25V
Crss
Reverse Transfer Capacitance
âââ 100 âââ
Æ = 1.0MHz,
Coss eff.
Effective Output Capacitance
âââ 290 âââ
VGS = 0V, VDS = 0V to 200V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
EAR
VDS(Avalanche)
IAS
Parameter
d Single Pulse Avalanche Energy
 Repetitive Avalanche Energy
ÃÂ Repetitive Avalanche Voltage
Ãd Avalanche Current
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ.
Max.
Units
âââ
130
mJ
âââ
33
mJ
300
âââ
V
âââ
26
A
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
190
840
Max. Units
Conditions
MOSFET symbol
46
A showing the
integral reverse
180
p-n junction diode.
1.3
e V TJ = 25°C, IS = 26A, VGS = 0V
290
1260
ns TJ = 25°C, IF = 26A, VDD = 50V
e nC di/dt = 100A/µs
2
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