IRFB4229PBF Datasheet, PDF (1/8 Pages) International Rectifier – PDP SWITCH

PD - 97078
PDP SWITCH
IRFB4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E_PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q_G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
V_DS min
250
V
V_{DS (Avalanche)} typ.
R_DS(ON) typ. @ 10V
300
V
38
m:
I_RP max @ T_C= 100°C
91
A
T_J max
175
°C
D
D
G
G
Gate
S
D
Drain
S
D
G
TO-220AB
S
Source
Description
This HEXFET^® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E_PULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
I_DM
I_RP @ T_C = 100°C
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
P_D @T_C = 25°C
Power Dissipation
P_D @T_C = 100°C
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
f^Parameter
Junction-to-Case
f ^{Case-to-Sink, Flat, Greased Surface}
Junction-to-Ambient
Max.
±30
46
33
180
91
330
190
2.2
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through … are on page 8
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1
04/12/06