IRF9395MPBF Datasheet, PDF (2/9 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

IRF9395MTRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
Drain-to-Source Breakdown Voltage
-30
∆ΒV_DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
Gate Threshold Voltage
-1.3
∆V_GS(th)/∆T_J
Gate Threshold Voltage Coefficient
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
40
Q_g
Total Gate Charge
–––
Q_g
Total Gate Charge
–––
Q_gs1
Pre- Vth Gate-to-Source Charge
–––
Q_gs2
Post -Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
g (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.012
5.3
9.0
-1.8
-6.1
–––
–––
–––
–––
–––
64
32
6.5
3.2
15
7.3
18.2
23
15
16
142
76
121
3241
820
466
Typ.
–––
–––
–––
43
62
Max. Units
Conditions
––– V ^VGS ^{= 0V, I}D ^{= -250µA}
–––
7.0
11.9
mV/°C Reference to 25°C, ID = -1.0mA
hh _mΩ
V_GS = -10V, I_D = -14A
V_GS = -4.5V, I_D = -11 A
-2.4
–––
V
mV/°C
V_DS
=
V_GS,
I_D
=
-50µA
-1.0
-150
µA ^{VDS = -24V, VGS = 0V}
V_DS = -24V, V_GS = 0V, T_J = 125°C
-100
100
nA ^{VGS = -20V}
V_GS = 20V
––– S VDS = -15V, ID = -11A
–––
V_DS = -15V, V_GS = -10V, I_D = -11A
–––
–––
V_DS = -15V
––– nC V_GS = -4.5V
–––
I_D = -11A
–––
See Fig.15
–––
––– nC VDS = -16V, VGS = 0V
––– Ω
–––
Ãh V_DD = -15V, V_GS = -4.5V
––– _ns ^ID ^{= -11A}
–––
R_G = 1.8Ω
–––
See Fig.17
–––
V_GS = 0V
––– pF VDS = -15V
–––
ƒ = 1.0KHz
Max. Units
Conditions
-57
-110
-1.2
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
h V T_J = 25°C, I_S = -11A, V_GS = 0V
65 ns TJ = 25°C, IF = -11A, ,VDD = -15V
h 93 nC di/dt = 260A/µs
Notes:
† Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com