IRF9395MPBF Datasheet, PDF (1/9 Pages) International Rectifier – Isolation Switch for Input Power or Battery Application

PD - 96332A
IRF9395MPbF
IRF9395MTRPbF
DirectFET™ dual P-Channel Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
Applications
l Isolation Switch for Input Power or Battery Application
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Q_{g tot} Q_gd
Q_gs2
Q_rr
Q_oss V_gs(th)
Features and Benefits
l Environmentaly Friendly Product
32nC
15nC 3.2nC
Q1-Q2
62nC
23nC
-1.8V
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
G
S
D
S
G
S
D
S
MC
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
MC
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFET^TM packaging
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9395MTRPbF
IRF9395MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
Max.
-30
±20
-14
-11
-75
-110
Units
V
A
24
20
ID = -14A
16
12
TJ = 125°C
8
4
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ^{ID= -11A}
10.0
8.0
VDS= -24V
VDS= -15V
VDS= -6V
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
1
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