IRF7799L2PBF Datasheet, PDF (2/11 Pages) International Rectifier – RoHS Compliant, Halogen Free

IRF7799L2PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Drain-to-Source Breakdown Voltage
250
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
3.0
Gate Threshold Voltage Coefficient
–––
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
54
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
Total Gate Charge
–––
Pre-Vth Gate-to-Source Charge
–––
Post-Vth Gate-to-Source Charge
–––
Gate-to-Drain Charge
–––
Gate Charge Overdrive
–––
Switch Charge (Q_gs2 + Q_gd)
–––
Output Charge
–––
Gate Resistance
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Output Capacitance
–––
Output Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
0.12
32
4.0
-13
–––
–––
–––
–––
–––
110
26
5.7
39
39
45
33
0.73
36.3
33.5
73.9
26.6
6714
606
157
5063
217
Typ.
–––
–––
–––
132
1412
Max. Units
Conditions
––– V ^VGS ^{= 0V, I}D ^{= 250μA}
i ^{––– V/°C Reference to 25°C, ID = 2mA}
38 mΩ ^VGS ^{= 10V, I}D ^{= 21A}
5.0
V VDS = VGS, ID = 250μA
––– mV/°C
20
1
100
-100
–––
μA
1mA
nA
S
V_DS = 250V, V_GS = 0V
V_DS = 250V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
V_DS = 50V, I_D = 21A
165
–––
V_DS = 125V
––– _nC ^VGS ^{= 10V}
I_D = 21A
–––
See Fig. 9
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
–––
–––
Ãi Ω
V_DD = 125V, V_GS = 10V
––– _ns ID = 21A
–––
R_G=6.2Ω
–––
–––
V_GS = 0V
–––
V_DS = 25V
––– pF ƒ = 1.0MHz
–––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
–––
V_GS = 0V, V_DS = 80V, f=1.0MHz
Max. Units
Conditions
MOSFET symbol
35
showing the
A
integral reverse
140
1.3
i ^{p-n junction diode.}
V TJ = 25°C, IS = 21A, VGS = 0V
198
2118
i ^{ns TJ = 25°C, IF = 21A, VDD = 50V}
nC di/dt = 100A/μs
2
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February 24, 2014