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IRF7748L1PBF Datasheet, PDF (2/10 Pages) International Rectifier – DirectFET™ Power MOSFET | |||
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IRF7748L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ïïVDSS/ïTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
ïVGS(th)/ïTJ Gate Threshold Voltage Temp. Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Preâ Vth Gate-to-Source Charge
Postâ Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ï
ï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
60
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
176
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ âââ
0.022 âââ
1.7 2.2
2.9 4.0
-9.9 âââ
âââ 20
âââ 250
âââ 100
âââ -100
âââ âââ
146 220
31 âââ
12 âââ
40 âââ
63 âââ
52 âââ
82 âââ
1.3 âââ
19 âââ
104 âââ
54 âââ
77 âââ
8075 âââ
1150 âââ
540 âââ
5390 âââ
850 âââ
Units
Conditions
V
V/°C
mïï
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2mA
VGS = 10V, ID = 89A ïï
V VDS = VGS, ID = 250µA
mV/°C
µA
VDS =60 V, VGS = 0V
VDS =60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
S VDS = 10V, ID =89A
VDS = 30V
nC VGS = 10V
ID = 89A
See Fig.9
nC VDS = 16V,VGS = 0V
ïï
VDD = 30V, VGS = 10Vï
ns
ID = 89A
RG= 1.8ïï
VGS = 0V
VDS = 50V
pF Æ = 1.0MHz
VGS=0V, VDS = 1.0V,Æ =1.0MHz
VGS=0V, VDS = 48V,Æ =1.0MHz
Min.
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ 85
âââ 592
âââ 1.3
58 âââ
113 âââ
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 89A,VGS = 0V ïï
TJ = 25°C ,IF = 89A,VDD = 30V
di/dt = 100A/µs ïï ï
Notes:
ï
Repetitive rating; pulse width limited by max. junction temperature.
ï Pulse width ⤠400µs; duty cycle ⤠2%
2 www.irf.com © 2012 International Rectifier
February 18, 2013
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