IRF7748L1PBF Datasheet, PDF (1/10 Pages) International Rectifier – DirectFET™ Power MOSFET

IRF7748L1TRPbF
Applications
RoHS Compliant, Halogen Free 
Lead-Free (Qualified up to 260°C Reflow) 
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Industrial Qualified
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
V_DSS
60V min
V_GS
±20V max
R_DS(on)
1.7m@ 10V
Q_{g tot}
Q_gd
V_gs(th)
146nC
40nC
2.9V
SSS
D
D
G _SSS
Applicable DirectFET Outline and Substrate Outline 
DirectFET™ ISOMETRIC
L6
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7748L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7748L1TRPbF
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
E_AS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy 
I_AR
Avalanche Current 
Max.
60
±20
148
104
28
592
129
89
Units
V
A
mJ
A
8
I _D = 89A
6
4
T _J = 125°C
2
T _J = 25°C
0
2
4
6
8 10 12 14 16 18 20
V _GS, Gate -to -Source Voltage (V)
Notes ^{Fig 1. Typical On-Resistance vs. Gate Voltage}
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2012 International Rectifier
3.0
V _GS = 6V
2.5
V _GS = 7V
2.0
V _GS = 10V
1.5
V _GS = 12V
1.0
0
25 50 75 100 125 150 175 200
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
 TC measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T_J = 25°C, L = 0.033mH, R_G = 50, I_AS = 89A.
February 18, 2013