IRF6723M2DTRPBF Datasheet, PDF (2/10 Pages) International Rectifier – Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters

IRF6723M2DTR/TR1PbF
Static @ T_J = 25°C (each die unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
30 ––– ––– V ^VGS ^{= 0V, I}D ^{= 250µA}
–––
–––
–––
20
5.2
8.6
–––
6.6
11.3
mV/°C Reference to 25°C, ID = 1mA
i _mΩ V_GS = 10V, I_D = 15A
i V_GS = 4.5V, I_D = 12A
1.35 1.8 2.35 V ^VDS ^{= V}GS^{, I}D ^{= 25µA}
∆V_GS(th)/∆T_J
I_DSS
I_GSS
gfs
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
––– -7.2 ––– mV/°C
––– ––– 1.0 µA ^VDS ^{= 24V, V}GS ^{= 0V}
––– ––– 150
V_DS = 24V, V_GS = 0V, T_J = 125°C
––– ––– 100 nA ^VGS ^{= 20V}
––– ––– -100
V_GS = -20V
34 ––– ––– S ^VDS ^{= 15V, I}D ^=12A
Q_g
Q_gs1
Q_gs2
Q_gd
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
––– 9.4 14
––– 2.2 –––
V_DS = 15V
––– 1.2 ––– nC VGS = 4.5V
––– 3.3 –––
I_D = 12A
Q_godr
Q_sw
Q_oss
R_G
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 2.7 –––
––– 4.5 –––
––– 6.3 –––
––– 0.4 –––
––– 14 –––
––– 41 –––
––– 15 –––
––– 20 –––
––– 1380 –––
––– 290 –––
See Fig. 2
nC VDS = 16V, VGS = 0V
Ãi Ω
V_DD = 15V, V_GS = 4.5V
I_D = 12A
ns R_G= 6.8Ω
V_GS = 0V
pF ^VDS ^{= 15V}
C_rss
Reverse Transfer Capacitance
Diode Characteristics
––– 120 –––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 32
MOSFET symbol
(Body Diode)
A showing the
I_SM
Ãg ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 130
integral reverse
––– ––– 1.0
p-n junction diode.
i V T_J = 25°C, I_S = 12A, V_GS = 0V
––– 16
––– 17
24
26
i ^{ns TJ = 25°C, IF =12A}
nC di/dt = 370A/µs
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com