IRF6723M2DTRPBF Datasheet, PDF (1/10 Pages) International Rectifier – Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters

Applications
l Dual Common Drain Control MOSFETs for
Multiphase DC-DC Converters
Features
l Replaces Two Discrete MOSFETs
l Optimized for High Frequency Switching
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Compatible with existing Surface Mount
Techniques
l RoHS Compliant and Halogen Free
l 100% Rg tested
PD - 97441
IRF6723M2DTRPbF
IRF6723M2DTR1PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Q_{g tot} Q_gd
9.4nC 3.3nC
Q_gs2
1.2nC
Q_rr
17nC
Q_oss V_gs(th)
6.3nC 1.8V
G1
S1
G2
S2
Applicable DirectFET Outline and Substrate Outline 
DirectFET™ ISOMETRIC
S1
S2
SB
M2
M4
MA
L4
L6
L8
Description
The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.
The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching
losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of
processors operating at higher frequencies.
The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
Absolute Maximum Ratings (each die operating consecutively)
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
30
V
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
±20
15
13
A
47
130
71
mJ
12
A
25
14.0
20
ID = 15A
12.0 ^{ID= 12A}
VDS= 24V
10.0
VDS= 15V
15
8.0
10
TJ = 125°C
6.0
5
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
4.0
2.0
0.0
0
5
10
15
20
25
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.99mH, R_G = 25Ω, I_AS = 12A.
1
12/16/09