IRF6616PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – RoHS compliant containing no lead or bormide

IRF6616PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
40
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
75
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Ãd ^{Pulsed Source Current}
(Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
37
3.7
4.6
1.8
-5.5
–––
–––
–––
–––
–––
29
8.6
2.4
9.4
8.6
12
15
1.3
15
19
21
4.4
3765
560
285
Typ.
–––
–––
0.8
15
33
Max.
–––
–––
5.0
6.2
2.25
–––
1.0
150
100
-100
–––
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V ^VGS ^{= 0V, I}D ^{= 250µA}
mV/°C Reference to 25°C, ID = 1mA
™ _mΩ V_GS = 10V, I_D = 19A
™ V_GS = 4.5V, I_D = 15A
V ^VDS ^{= V}GS^{, I}D ^{= 250µA}
mV/°C
µA ^VDS ^{= 32V, V}GS ^{= 0V}
V_DS = 32V, V_GS = 0V, T_J = 125°C
nA ^VGS ^{= 20V}
V_GS = -20V
S ^VDS ^{= 20V, I}D ^{= 15A}
V_DS = 20V
nC VGS = 4.5V
I_D = 15A
See Fig. 15
nC VDS = 16V, VGS = 0V
Ù Ω
V_DD = 16V, V_GS = 4.5V
I_D = 15A
ns Clamped Inductive Load
V_GS = 0V
pF ^VDS ^{= 20V}
ƒ = 1.0MHz
Max.
110
150
1.0
23
50
Units
Conditions
MOSFET symbol
A showing the
integral reverse
V
™ ^{p-n junction diode.}
T_J = 25°C, I_S = 15A, V_GS = 0V
™ ^{ns TJ = 25°C, IF = 15A}
nC di/dt = 500A/µs
Notes:
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
‚ Repetitive rating; pulse width limited by max. junction temperature.
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