AUIRFI3205 Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Planar Technology

AUIRFI3205
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55
–––
–––
––– –––
0.057 –––
––– 0.008
V V_GS = 0V, I_D = 250μA
h V/°C Reference to 25°C, I_D = 1mA
f  V_GS = 10V, I_D = 34A
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
42 ––– –––
h ^{V VDS = VGS, ID = 250μA}
S V_DS = 25V, I_D = 59A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25 μA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– ––– 170
I_D = 59A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
32
74
fh nC VDS = 44V
V_GS = 10V, See Fig. 6&13
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 28V
t_r
Rise Time
––– 100 –––
I_D = 59A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
43
70
–––
–––
fh ns RG = 2.5
R_D = 0.39, See Fig. 10
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
C_iss
Input Capacitance
––– 4000 –––
V_GS = 0V
C_oss
C_rss
Output Capacitance
Reverse Transfer Capacitance
––– 1300 –––
––– 480 –––
h pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
C
Drain to Sink Capacitance
Diode Characteristics
––– 12 –––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 64
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 390
integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 34A, V_GS = 0V
fh ^{––– 110 170 ns TJ = 25°C, IF = 59A}
––– 450 680 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 190µH
R_G = 25, I_AS = 59A. (See Figure 12)
ƒ I_SD  59A, di/dt  290A/µs, V_DD  V_(BR)DSS,
T_J  175°C
„ Pulse width 300µs; duty cycle 2%.
… t=60s, ƒ=60Hz
† Uses IRF3205 data and test conditions.
‡ R_ is measured at Tj at approximately 90°C.
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