AUIRFI3205 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
PD - 97764
Features
● Advanced Planar Technology
● Low On-Resistance
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Distance = 4.8mm
● 175°C Operating Temperature
● Fully Avalanche Rated
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rug-
gedized device design that HEXFET power
MOSFETs are well known for, provides the de-
signer with an extremely efficient and reliable de-
vice for use in Automotive and a wide variety of
other applications.
AUIRFI3205
HEXFET^® Power MOSFET
V_(BR)DSS
R_DS(on) max.
I_D
55V
0.008
64A
S
D
G
TO-220AB Full-Pak
AUIRFI3205
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
64
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
I_DM
ch Pulsed Drain Current
45
A
390
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
63
W
0.42
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy (Thermally Limited)
ch Avalanche Current
e Repetitive Avalanche Energy
eh Peak Diode Recovery dv/dt
± 20
V
480
mJ
59
A
6.3
mJ
5.0
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
y y ³⁰⁰
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_JC
i Junction-to-Case
Typ.
–––
Max.
2.4
Units
°C/W
R_JA
Junction-to-Ambient
–––
65
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/14/12