ISL32613E Datasheet, PDF (9/11 Pages) Intersil Corporation – ±16.5kV ESD Protected, +125°C, 1.8V to 3.6V, Low Power, SOT-23, RS-485/RS-422 Transmitters

ISL32613E, ISL32614E
Typical Performance Curves V_CC = 1.8V, T_A = +25°C; Unless Otherwise Specified. (Continued)
R_D = 10kΩ, C_D = 50pF
2
DI
0
R_D = 10kΩ, C_D = 50pF
2
DI
0
1.5
1
0.5
Y-Z
0
-0.5
-1
-1.5
TIME (1µs/DIV)
FIGURE 10. ISL32613E DRIVER WAVEFORMS, LOW TO HIGH
1.5
1
0.5
Y-Z
0
-0.5
-1
-1.5
TIME (1µs/DIV)
FIGURE 11. ISL32614E DRIVER WAVEFORMS, HIGH TO LOW
R_D = 10kΩ, C_D = 50pF
2
DI
0
1.5
1
0.5
Y-Z
0
-0.5
-1
-1.5
TIME (400ns/DIV)
FIGURE 12. ISL32614E DRIVER WAVEFORMS, LOW TO HIGH
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
PROCESS:
Si Gate BiCMOS
R_D = 10kΩ, C_D = 50pF
2
DI
0
1.5
1
0.5
Y-Z
0
-0.5
-1
-1.5
TIME (400ns/DIV)
FIGURE 13. ISL32614E DRIVER WAVEFORMS, HIGH TO LOW
9
FN7906.0
August 30, 2011