HCTS30MS Datasheet, PDF (9/10 Pages) Intersil Corporation – Radiation Hardened 8-Input NAND Gate

Die Characteristics
DIE DIMENSIONS:
87 x 88 mils
METALLIZATION:
Type: SiAl
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO₂
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 10⁵A/cm²
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCTS30MS
HCTS30MS
A
VCC
NC
(1)
(14)
(13)
B (2)
C (3)
(12) H
(11) G
D (4)
(10) NC
E (5)
(9) NC
(6)
(7)
(8)
F
GND
Y
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS30 is TA14428A.
Spec Number 518639
448