HCTS30MS Datasheet, PDF (6/10 Pages) Intersil Corporation – Radiation Hardened 8-Input NAND Gate

Specifications HCTS30MS
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
READ AND RECORD
PRE RAD
POST RAD
1, 9
Table 4 (Note 1)
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
8, 9, 10, 13
1 - 5, 6, 7, 11, 12
-
14
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
8, 9, 10, 13
7
-
1 - 5, 6, 11, 12, 14
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
9, 10, 13
7
8
14
1 - 5, 6, 11, 12
-
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
8, 9, 10, 13
7
1, 2, 3, 4, 5, 6, 11, 12, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518639
445