RFF70N06 Datasheet, PDF (8/8 Pages) Intersil Corporation – 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

RFF70N06
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table)
.
Delta Tests and Limits (JANTX/JANTXV Equivalent)
PARAMETER
SYMBOL
Gate to Source Leakage Current
I_GSS
Zero Gate Voltage Drain Current
I_DSS
On Resistance
r_DS(ON)
Gate Threshold Voltage
V_GS(TH)
NOTES:
5. Or 100% of Initial Reading (whichever is greater).
6. Of Initial Reading.
TEST CONDITIONS
V_GS = ±20V, T_C = 25^oC
V_DS = 80% Rated Value, T_C = 25^oC
T_C = 125^oC at Rated I_D
I_D = 1.0mA, T_C = 25^oC
MAX
±20 (Note 5)
±25 (Note 5)
±20% (Note 6)
±20% (Note 6)
UNITS
nA
µA
Ω
V
Screening Information
TEST
Gate Stress
Pind
PDA
Pre Burn-In Test (Note 7)
Steady State Gate Bias (Gate Stress)
Interim Electrical Tests (Note 7)
Steady State Reverse Bias (Drain Stress)
Final Electrical Tests (Note 7)
NOTE:
7. Test limits are identical pre and post burn-in.
JANTX/JANTXV EQUIVALENT
V_GS = 30V, t = 250µs
Optional
10%
MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25^oC)
MIL-STD-750, Method 1042, Condition B
V_GS = 80% of Rated Value,
T_A = 150^oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and Limits Table
MIL-STD-750, Method 1042, Condition A
V_DS = 80% of Rated Value,
T_A = 150^oC, Time = 168 hours
MIL-S-19500, Group A, Subgroup 2
Additional Screening Tests
PARAMETER
Safe Operating Area
Unclamped Inductive Switching
Thermal Response
Thermal Impedance
SYMBOL
SOA
I_AS
∆V_SD
∆V_SD
TEST CONDITIONS
V_DS = 48V, t = 10ms
V_GS(PEAK) = 15V, L = 0.1mH
t_H = 100ms; V_H = 25V, I_H = 4A
t_H = 500ms; V_H = 25V, I_H = 4A
MAX
4.8
75
220
330
UNITS
A
A
mV
mV
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