RFF70N06 Datasheet, PDF (2/8 Pages) Intersil Corporation – 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

RFF70N06
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 4) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
RFF70N06
60
60
±20
25 (Note 2)
Refer to Peak Current Curve
Refer to UIS Curve
100
0.80
-55 to 150
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
2. Current is limited by the package capability.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 3)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V
60
V_GS(TH) V_GS = V_DS, I_D = 250µA
2.0
I_DSS
I_GSS
V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
V_GS = ±20V, T_C = 125^oC
-
r_DS(ON) I_D = 25A, V_GS = 10V
-
t_ON
V_DD = 30V, I_D ≈ 25A, R_L = 1.2Ω,
-
t_d(ON)
V_GS = 10V, R_GS = 2.35Ω
(Figures 13, 16, 17)
-
t_r
-
t_d(OFF)
-
t_f
-
t_OFF
-
Q_g(TOT) V_GS = 0 to 20V V_DD = 30V, I_D = 25A,
-
Q_g(10)
V_GS = 0 to 10V
R_L = 1.2Ω
I_G(REF) = 1.0mA
-
Q_g(TH) V_GS = 0 to 2V (Figures 18, 19)
-
C_ISS
V_DS = 25V, V_GS = 0V, f = 1MHz
-
C_OSS
(Figure 12)
-
C_RSS
-
R_θJC
-
R_θJA
-
TYP
-
3.0
-
-
-
-
-
25
70
60
25
-
-
-
-
3100
900
300
-
-
MAX
-
4.5
25
250
±100
0.025
240
70
170
150
65
215
260
145
7
-
-
-
1.25
48
UNITS
V
V
µA
µA
µΑ
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
V_SD
I_SD = 25A
-
1.1
1.5
V
Diode Reverse Recovery Time
t_rr
I_SD = 25A, dI_SD/dt = 100A/µs
-
190 300
ns
NOTES:
3. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve Figure 3).
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