RFF70N06 Datasheet, PDF (4/8 Pages) Intersil Corporation – 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

RFF70N06
Typical Performance Curves Unless Otherwise Specified (Continued)
300
100
75
STARTING T_J = 150^oC
150
V_GS = 10V
125 ^{VGS = 20V}
STARTING T_J = 25^oC
100
10
75
V_GS = 7V
250µs PULSE TEST
T_C = 25^oC
V_GS = 6V
If R = 0
t_AV = (L) (I_AS) / (1.3 RATED BV_DSS - V_DD)
If R ≠ 0
1 ^{tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]}
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
50
V_GS = 4.5V
V_GS = 5V
25
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
150
V_DD = 15V
PULSE DURATION = 250µs
125 _{DUTY CYCLE = 0.5% MAX}
100
75
-55^oC
25^oC
150^oC
50
25
0
0
2
4
6
8
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
V_GS = V_DS, I_D = 250µA
1.5
2.5
PULSE DURATION = 250µs
V_GS = 10V,
2.0 ^ID ^{= 25A}
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I_D = 250µA
1.5
1.0
0.5
0
-80
-40
0
40
80
120 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
1.0
0.5
0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-445