ISL78208 Datasheet, PDF (8/25 Pages) Intersil Corporation – Wide VIN Dual Standard Buck Regulator with 3A/3A Continuous Output Current

ISL78208
Electrical Specifications T_A = -40°C to +105°C, V_IN = 4.5V to 28V, unless otherwise noted. Typical values are at T_A = +25°C.
Boldface limits apply over the operating temperature range, -40°C to +105°C (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
(Note 8)
MAX
TYP
(Note 8) UNITS
Soft-Start Ramp Time
SS1/2 = VCC
1.5
2.5
3.5
ms
Soft-Start Charging Current
I_SS
POWER-GOOD
1.4
2
2.6
µA
PG1, PG2 Trip Level PG to PGOOD1,
Rise
PGOOD2
Fall
91
94
%
82.5
85.5
%
PG1, PG2 Propagation Delay
Percentage of the soft-start time
10
%
PG1, PG2 Low Voltage
ISINK = 3mA
100
300
mV
ENABLE INPUT
EN1, EN2 Leakage Current
EN1/2 = 0V/5V
-1
1
µA
EN1, EN2 Input Threshold Voltage
Low Level
0.8
V
Float Level
1.0
1.4
V
High Level
2
V
SYNC INPUT/OUTPUT
SYNCIN Input Threshold
Falling Edge
1.1
1.4
V
Rising Edge
1.6
1.9
V
Hysteresis
200
mV
SYNCIN Leakage Current
SYNCIN = 0V/5V
10
1000
nA
SYNCIN Pulse Width
100
ns
SYNCOUT Phase-shift to SYNCIN
Measured from rising edge to rising
edge, if duty cycle is 50%
180
°
SYNCOUT Frequency Range
SYNCOUT Output Voltage High
SYNCOUT Output Voltage Low
T_A = +25°C
T_A = -40°C to +105°C
ISYNCOUT = 3mA
600
4000
kHz
600
3000
V_CC - 0.3 V_CC -0.08
V
0.08
0.3
V
FAULT PROTECTION
Thermal Shutdown Temperature
Overcurrent Protection Threshold
T_SD
T_HYS
Rising Threshold
Hysteresis
(Note 7)
150
°C
20
°C
4.1
5.1
6.1
A
OCP Blanking Time
60
ns
POWER MOSFET
Highside
Internal BOOT1, BOOT2 Refresh Lowside
PHASE Leakage Current
R_HDS
R_LDS
I_PHASE = 100mA
I_PHASE = 100mA
EN1/2 = PHASE1/2 = 0V
75
150
mΩ
1
Ω
300
nA
PHASE Rise Time
t_RISE V_IN = 25V
10
ns
NOTES:
6. Test Condition: V_IN = 28V, FB forced above regulation point (0.8V), no switching, and power MOSFET gate charging current not included.
7. Established by both current sense amplifier gain test and current sense amplifier output test @ I_L = 0A.
8. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
8
FN8354.0
July 12, 2013