RFT1P06E Datasheet, PDF (7/8 Pages) Intersil Corporation – 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

RFT1P06E
PSPICE Electrical Model
SUBCKT RFT1P06E 2 1 3; rev 10/16/97
CA 12 8 7.42e-10
CB 15 14 8.04e-10
CIN 6 8 5.5e-10
DBODY 5 7DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6DPLCAPMOD
DESD1 91 9 DESD1MOD
DESD2 91 7DESD2MOD
EBREAK 5 11 17 18 -69.1
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
GATE
1
LGATE
RLGATE
LDRAIN 2 5 1e-9
LGATE 1 9 1.73e-9
LSOURCE 3 7 3.9e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9.52e-2
RGATE 9 20 3.95
RLDRAIN 2 5 10
RLGATE 1 9 17.3
RLSOURCE 3 7 39
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD .144
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
ESG
10
8+
6
5
LDRAIN
DRAIN
2
RSLC2
RSLC1
51
+
5
51
ESLC
50
+
EBREAK
17
18
RLDRAIN
DPLCAP
EVTEMP
RGATE _{18 +}
9 20 ²²
DESD1
91
DESD2
RDRAIN
16
EVTHRES
+ ₁₉
21
8
11
MWEAK
6
MMED
DBREAK
MSTRO
CIN
8
RSOURCE
7
DBODY
LSOURCE
SOURCE
3
RLSOURCE
S1A
12
13
8
S2A
14 15
13
RBREAK
17
18
S1B
13
CA
+
EGS
6
8
S2B
CB
+ ¹⁴
EDS ⁵
8
RVTEMP
IT
19
VBAT
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*22),9))}
.MODEL DBODYMOD D (IS = 4.15e-15 RS = 5.54e-2 TRS1 = -1.32e-3 TRS2 = -2.48e-6 CJO = 6.06e-10 TT = 7.54e-8)
.MODEL DBREAKMOD D (RS = 4.66e-1 TRS1 = 1.48e-3 TRS2 = -7.49e-6)
.MODEL DPLCAPMOD D (CJO = 2.49e-10 IS = 1e-30 N = 10)
.MODEL DESD1MOD D (BV=20.2 TBV1=-1.25e-3 TBV2=5.79e-7 RS=36 NBV=1 IBV=7e6)
.MODEL DESD2MOD D (BV=25.4 TBV1=-8.3e-4 TBV2=8.9e-7 NBV=1 IBV=7e6)
.MODEL MMEDMOD NMOS (VTO = -3.32 KP =.258 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MSTROMOD NMOS (VTO = -3.824 KP = 4.8 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = -3.0 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBREAKMOD RES (TC1 = 9.48e-4 TC2 = -1.42e-7)
.MODEL RDRAINMOD RES (TC1 = 5.4e-3 TC2 = 1.25e-5)
.MODEL RSLCMOD RES (TC1 = 1.75e-3 TC2 = 3.9e-6)
.MODEL RSOURCEMOD RES (TC1 = 5.4e-3 TC2 = 1.25e-5)
.MODEL RVTHRESMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTEMPMOD RES (TC1 = -3.55e-3 TC2 = -3.43e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON =5.1 VOFF= 3.1)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON =3.1 VOFF= 5.1)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.10 VOFF= -2.9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.9 VOFF= 2.10)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
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