RFT1P06E Datasheet, PDF (4/8 Pages) Intersil Corporation – 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

RFT1P06E
Typical Performance Curves (Continued)
-10
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING T_J = 25^oC
STARTING T_J = 150^oC
-1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
-20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_A = 25^oC
-15
-10
V_GS = -20V
V_GS = -10V
V_GS = -7V
V_GS = -6V
-5
V_GS = -5V
0
0
-1.5
-3.0
-4.5
-6
-7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DD = -15V
-15
-55^oC
25^oC
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = -10V, I_D = -1.4A
2.0
-10
150^oC
-5
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
1.5
1.0
0.5
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
V_GS = V_DS, I_D = -250µA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4-174
1.2
I_D = -250µA
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE