RFT1P06E Datasheet, PDF (1/8 Pages) Intersil Corporation – 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

Data Sheet
RFT1P06E
August 1999 File Number 4495.1
1.4A, 60V, 0.285 Ohm, ESD Rated,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49044.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFT1P06E
SOT-223
R1P06E
NOTE: RFT1P06E is available only in tape and reel.
Features
• 1.4A, 60V
• r_DS(ON) = 0.285Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE^® Model
• SPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150^oC Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
4-171
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.