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ISL71091SEH40 Datasheet, PDF (6/16 Pages) Intersil Corporation – 4.096V Radiation Hardened Ultra Low Noise,
ISL71091SEH40
Electrical Specifications for Die VIN = 8V, IOUT = 0, CL = 1µF and CCOMP = 0.001µF unless otherwise specified. Boldface limits apply
after radiation at +25°C and across the operating temperature range, -55°C to +125°C without radiation, unless otherwise specified. Specifications
over temperature are guaranteed but not production tested on die.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
MAX
(Note 6)
TYP
(Note 6) UNITS
VOUT
VOA
Output Voltage
VOUT Accuracy at TA = +25°C
VOUT = 4.096V (Note 10)
VOUT Accuracy at TA = -55°C to +125°C VOUT = 4.096V (Note 10)
VOUT Accuracy at TA = +25°C, Post
Radiation
VOUT = 4.096V (Note 10)
4.096
V
-0.05
+0.05
%
-0.15
+0.15
%
-0.25
+0.25
%
TC VOUT
Output Voltage Temperature
Coefficient (Note 7)
6
ppm/°C
VIN
Input Voltage Range
VOUT = 4.096V
6.0
30.0
V
IIN
Supply Current
0.3
0.5
mA
VOUT /VIN Line Regulation
VIN = 6.0V to 30V
0.3
5.0
ppm/V
VOUT/IOUT Load Regulation
Sourcing: 0mA ≤ IOUT ≤ 10mA
11
20
ppm/mA
Sinking: -5mA ≤ IOUT ≤ 0mA
25
50
ppm/mA
VD
Dropout Voltage (Note 8)
IOUT = 10mA
1.1
1.6
V
NOTES:
6. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
7. Across the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the
temperature range; in this case, -55°C to +125°C = +180°C.
8. Dropout Voltage is the minimum VIN - VOUT differential voltage measured at the point where VOUT drops 1mV from VIN = nominal at TA = +25°C.
9. Post-reflow drift for the ISL71091SEH40 devices can exceed 100µV based on experimental results with devices on FR4 double-sided boards. The
engineer must take this into account when considering the reference voltage after assembly.
10. The VOUT accuracy is based on die mount with Silver Glass die attach material such as “QMI 2569” or equivalent in a package with an Alumina
ceramic substrate.
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6
FN8634.2
March 17, 2016