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ISL71091SEH40 Datasheet, PDF (1/16 Pages) Intersil Corporation – 4.096V Radiation Hardened Ultra Low Noise, | |||
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DATASHEET
4.096V Radiation Hardened Ultra Low Noise, Precision
Voltage Reference
ISL71091SEH40
The ISL71091SEH40 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 6.0V to 30V. It uses Intersilâs advanced bipolar technology
to achieve 6.2µVP-P 0.1Hz to 10Hz noise with an initial voltage
accuracy of 0.05%.
The ISL71091SEH40 offers a 4.096V output voltage option
with 6ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld flatpack package.
The ISL71091SEH40 is ideal for high-end instrumentation,
data acquisition and processing applications requiring high DC
precision where low noise performance is critical.
Applications
⢠Precision voltage sources for data acquisition system for
space applications
⢠Strain and pressure gauge for space applications
⢠Radiation hardened PWM requiring precision outputs
Related Literature
⢠AN1906, âISL71091SEHxxEV1Z Userâs Guideâ
⢠AN1938, âSingle Event Effects (SEE) Testing of the
ISL71091SEHxx Precision Voltage References Familyâ
⢠AN1939, âTotal Dose Testing of the ISL71091SEHxx
Precision Voltage Referenceâ
Features
⢠Reference output voltage . . . . . . . . . . . . . . . .4.096V ±0.05%
⢠Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%
⢠Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%
⢠Output voltage noise . . . . . .6.2µVP-P typical (0.1Hz to 10Hz)
⢠Supply current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300µA (Typ)
⢠VOS temperature coefficient . . . . . . . . . . 6ppm/°C maximum
⢠Output current capability . . . . . . . . . . . . . . . . . . 10mA /-5mA
⢠Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum
⢠Load regulation (sourcing) . . . . . . . . . 20ppm/mA maximum
⢠Operating temperature range. . . . . . . . . . . .-55°C to +125°C
⢠Radiation environment
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB free (VCC = 36V) . . . . . . . . . . . . 86MeVâ¢cm2/mg
*Product capability established by initial characterization. The
âEHâ version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
⢠Electrically screened to SMD 5962-14208
VIN
0.1µF
ISL71091SEH40
1
DNC
8
DNC
2
VIN
7
DNC
3 COMP VOUT 6
1nF 4
GND
5
TRIM
VDD
VEE
NOTE: Select C to minimize
settling time.
REFIN DACOUT
VDD
D12
VEE
D0
BIPOFF
GND
HS-565BRH
VREF
1µF
C
1.1k
FIGURE 1. ISL71091SEH40 TYPICAL APPLICATION DIAGRAM
4.101
4.100
4.099
4.098
4.097
4.096
4.095
4.094
4.093
4.092
4.091
-65
UNIT 2
UNIT 3
UNIT 5 UNIT 4
UNIT 1
-45 -25
-5 15 35 55 75
TEMPERATURE (°C)
95 115 135
FIGURE 2. VOUT vs TEMPERATURE
March 17, 2016
1
FN8634.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2014, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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