ISL6237 Datasheet, PDF (6/35 Pages) Intersil Corporation – High-Efficiency, Quad-Output, Main Power Supply Controllers for Notebook Computers

ISL6237
Electrical Specifications
PARAMETER
No load on LDO, OUT1, OUT2, and REF, V_IN = 12V, EN2 = EN1 = VCC, VBYP = 5V, PVCC = 5V,
V_{EN_LDO} = 5V, T_A = -40°C to +100°C, unless otherwise noted. Typical values are at T_A = +25°C. (Continued)
CONDITIONS
MIN
(Note 4)
TYP
MAX
(Note 4) UNITS
SKIP Input Voltage
Low level (SKIP)
0.8
V
Float level (ULTRASONIC SKIP)
1.7
2.3
V
High level (PWM)
2.4
V
TON Input Voltage
Low level
0.8
V
Float level
1.7
2.3
V
High level
2.4
V
EN1, EN2 Input Voltage
Clear fault level/SMPS off level
0.8
V
Delay start level
1.7
2.3
V
SMPS on level
2.4
V
EN_LDO Input Voltage
Rising edge
1.2
1.6
2.0
V
Falling edge
0.94
1.00
1.06
V
Input Leakage Current
V_tON = 0 or 5V
V_{EN_} = V_{EN_LDO} = 0V or 5V
VSKIP = 0V or 5V
-1
+1
µA
-0.1
+0.1
µA
-1
+1
µA
INTERNAL BOOT DIODE
V_FB1 = 0V or 5V
V_REFIN = 0V or 2.5V
V_LDOREFIN = 0V or 2.75V
-0.2
+0.2
µA
-0.2
+0.2
µA
-0.2
+0.2
µA
V_D Forward Voltage
I_{BOOT_LEAKAGE} Leakage Current
MOSFET DRIVERS
PVCC - V_BOOT, I_F = 10mA
V_BOOT = 30V, PHASE = 25V, PVCC = 5V
0.65
0.8
V
500
nA
UGATE_ Gate-Driver Sink/Source Current UGATE1, UGATE2 forced to 2V
2
A
LGATE_ Gate-Driver Source Current
LGATE1 (source), LGATE2 (source), forced to 2V
1.7
A
LGATE_ Gate-Driver Sink Current
LGATE1 (sink), LGATE2 (sink), forced to 2V
3.3
A
UGATE_ Gate-Driver ON-resistance
BST_ - PHASE_ forced to 5V (Note 3)
1.5
4.0
Ω
LGATE_ Gate-Driver ON-resistance
LGATE_, high state (pull-up) (Note 3)
2.2
5.0
Ω
LGATE_, low state (pull-down) (Note 3)
0.6
1.5
Ω
Dead Time
LGATE_ Rising
15
20
35
ns
UGATE_ Rising
20
30
50
ns
OUT1, OUT2 Discharge ON-resistance
25
40
Ω
6
FN6418.4
March 18, 2008