HFA3102 Datasheet, PDF (6/6 Pages) Intersil Corporation – Dual Long-Tailed Pair Transistor Array

Die Characteristics
PROCESS:
UHF-1
DIE DIMENSIONS:
53 mils x 52 mils x 14 mils
1340µm x 1320µm x 355.6µm
METALIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
HFA3102
PASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
SUBSTRATE POTENTIAL (Powered Up):
Floating
HFA3102
TOP VIEW
1340µm
(53 mils)
2
1
14
13
12
3
11
4
10
5
6
7
8
9
1320µm
(52 mils)
Pad numbers correspond to the 14 pin SOIC pinout.
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