HFA3102 Datasheet, PDF (2/6 Pages) Intersil Corporation – Dual Long-Tailed Pair Transistor Array

HFA3102
Absolute Maximum Ratings T_A = 25^oC
V_CEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . 8.0V
V_CBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V
V_EBO Emitterr to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
I_C, Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40^oC to 85^oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θ_JA (^oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
Maximum Power Dissipation at 75^oC
Any One Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175^oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150^oC
Maximum Storage Temperature Range . . . . . . . . . . -65^oC to 150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300^oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ_JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications T_A = 25^oC
SYMBOLS
PARAMETER
TEST CONDITIONS
(NOTE 2)
TEST
LEVEL
ALL GRADES
MIN TYP MAX
UNITS
V_(BR)CBO
Collector-to-Base Breakdown Voltage
(Q₁, Q₂, Q₄, and Q₅)
I_C = 100µA, I_E = 0
A
12
18
-
V
V_(BR)CEO
Collector-to-Emitter Breakdown
Voltage (Q₁ thru Q₆)
I_C = 100µA, I_B = 0
A
8
12
-
V
V_(BR)EBO
Emitter-to-Base Breakdown Voltage (Q₃
and Q₆)
I_E = 50µA, I_C = 0
A
5.5
6
-
V
I_CBO
Collector Cutoff Current
(Q₁, Q₂, Q₄, and Q₅)
V_CB = 5V, I_E = 0
A
-
0.1
10
nA
I_EBO
Emitter Cutoff Current (Q₃ and Q₆)
V_EB = 1V, I_C = 0
A
-
-
100
nA
h_FE
DC Current Gain (Q₁ thru Q₆)
I_C = 10mA, V_CE = 3V
A
40
70
-
-
C_CB
Collector-to-Base Capacitance
V_CB = 5V, f = 1MHz
B
-
300
-
fF
C_EB
Emitter-to-Base Capacitance
V_EB = 0, f = 1MHz
B
-
200
-
fF
f_T
Current Gain-Bandwidth Product
I_C = 10mA, V_CE = 5V
C
-
10
-
GHz
f_MAX
Power Gain-Bandwidth Product
I_C = 10mA, V_CE = 5V
C
-
5
-
GHz
G_NFMIN
Available Gain at Minimum Noise Figure
I_C = 3mA, f = 0.5GHz
C
V_CE = 3V
f = 1.0GHz
C
-
17.5
-
dB
-
12.4
-
dB
NF_MIN
Minimum Noise Figure
I_C = 3mA, f = 0.5GHz
C
V_CE = 3V
f = 1.0GHz
C
-
1.8
-
dB
-
2.1
-
dB
NF_50Ω
50Ω Noise Figure
I_C = 3mA, f = 0.5GHz
C
V_CE = 3V
f = 1.0GHz
C
-
3.3
-
dB
-
3.5
-
dB
h_FE1/h_FE2
V_OS
I_OS
DC Current Gain Matching
(Q₁ and Q₂, Q₄ and Q₅)
Input Offset Voltage (Q₁ and Q₂),
(Q₄ and Q₅)
Input Offset Current (Q₁ and Q₂),
(Q₄ and Q₅)
I_C = 10mA, V_CE = 3V
I_C = 10mA, V_CE = 3V
I_C = 10mA, V_CE = 3V
A
0.9
1.0
1.1
-
A
-
1.5
5
mV
A
-
5
25
µA
3-450