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IRFP450 Datasheet, PDF (5/7 Pages) STMicroelectronics – N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET
IRFP450
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10000
8000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
6000
4000
2000
CISS
COSS
CRSS
0
1
2
5
10
2
5
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
16
TJ = 25oC
12
TJ = 150oC
8
4
0
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
5 DUTY CYCLE = 0.5% MAX
2
10
5
2 TJ = 150oC
1
5
TJ = 25oC
2
0.1
0
0.5
1.0
1.5
2.0
2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 14A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
00
25
50
75
100
125
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-357