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IRFP450 Datasheet, PDF (3/7 Pages) STMicroelectronics – N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET | |||
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IRFP450
Source to Drain Diode Speciï¬cations
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET Symbol
ISDM
Showing the Integral
Reverse P-N Junction
D
Rectifier
G
MIN TYP MAX UNITS
-
-
14
A
-
-
56
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 13A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 13A, dISD/dt = 100A/µs
-
- 1.4
V
- 1300 -
ns
- 7.4 -
µC
NOTES:
2. Pulse test: pulse width ⤠300µs, duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 7.9mH, RG = 25â¦, peak IAS = 14A.
Typical Performance Curves Unless Otherwise Speciï¬ed
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
10-2 0.01
SINGLE PULSE
10-3
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
4-355
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