IRFP450 Datasheet, PDF (4/7 Pages) STMicroelectronics – N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET

IRFP450
Typical Performance Curves Unless Otherwise Specified (Continued)
10³
OPERATION IN THIS
AREA IS LIMITED
BY r_DS(ON)
10²
10µs
10
100µs
1ms
1
T_J = MAX RATED
SINGLE PULSE
0.1
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
10ms
DC
10³
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
20
V_GS = 10V
V_GS = 6.0V
16
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_GS = 5.5V
8
V_GS = 5.0V
4
V_GS = 4.5V
V_GS = 4.0V
0
0
50
100
150
200
250
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
16
V_GS = 10V
12
V_GS = 6.0V
V_GS = 5.5V
8
V_GS = 5.0V
4
V_GS = 4.0V
V_GS = 4.5V
0
0
3
6
9
12
15
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
10²
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
10
1
T_J = 150^oC
T_J = 25^oC
0.1
10^-2
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
10
PULSE DURATION = 2µs
DUTY CYCLE = 0.5% MAX
0.9
V_GS = 10V V_GS = 20V
0.8
0.7
0.6
0.5
0.4
0.3
0
10
20
30
40
50
60
70
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.4 ^{VGS = 10V, ID = 7.9A}
1.8
1.2
0.6
0
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-356