IRFP360 Datasheet, PDF (5/7 Pages) Intersil Corporation – 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

IRFP360
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
10000
8000
1.05
6000
0.95
4000
C_ISS
C_OSS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.85
2000
C_RSS
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0
1
2
5
10
2
5
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≥ 50V
40
30
T_J = 25^oC
20
T_J = 150^oC
10
0
0
10
20
30
40
50
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10²
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_J = 150^oC
10
T_J = 25^oC
1
0
0.4
0.8
1.2
1.6
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 25A
16
V_DS = 80V
12
V_DS = 320V
8
4
0
0
25
50
75
100
125
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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