IRFP360 Datasheet, PDF (2/7 Pages) Intersil Corporation – 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

IRFP360
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFP360
400
400
23
14
92
±20
250
2
1200
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
300
260
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
400
-
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
-
4
V
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
-
-
25
µA
-
250
µA
On-State Drain Current (Note 2)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
I_D(ON)
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
V_GS = ±20V
I_D = 13A, V_GS = 10V (Figures 8, 9)
V_DS ≥ 50V, I_DS > 13A (Figure 12)
V_DD = 200V, I_D ≈ 25A, R_GS = 4.3Ω, V_GS = 10V,
R_L = 7.5Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature
23
-
-
A
-
-
±100 nA
-
0.18 0.20
Ω
14
21
-
S
-
22
33
ns
-
94
140
ns
-
80
120
ns
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
t_f
Q_g(TOT)
Q_gs
Q_gd
C_ISS
V_GS = 10V, I_D = 25A, V_DS = 0.8 x Rated BV_DSS
I_G(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
V_DS = 25V, V_GS = 0V, f = 1MHz (Figure 11)
-
66
99
ns
-
68
100
nC
-
17
-
nC
-
24
-
nC
-
4000
-
pF
Output Capacitance
Reverse Transfer Capacitance
C_OSS
C_RSS
-
550
-
pF
-
97
-
pF
Internal Drain Inductance
Internal Source Inductance
L_D
Measured between the Modified MOSFET
-
5.0
-
nH
Contact Screw on Header Symbol Showing the
closer to Source and Gate Internal Device
Pins and Center of Die Inductances
L_S
Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
D
-
13
-
nH
L_D
Bonding Pad
G
L_S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Free Air Operation
S
-
-
0.50 ^oC/W
-
-
30 ^oC/W
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