IRFP360 Datasheet, PDF (3/7 Pages) Intersil Corporation – 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

IRFP360
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 2)
SYMBOL
I_SD
I_SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
-
23
A
D
-
-
92
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = 23A, V_GS = 0V (Figure 13)
T_J = 25^oC, I_SD = 25A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = 25A, dI_SD/dt = 100A/µs
-
-
1.8
V
200 460 1000
ns
3.1
7.1
16
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 4mH, R_G = 25Ω, Peak I_AS = 23A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
25
20
15
10
5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.1 0.2
0.1
0.05
10^-2
0.02
0.01
10^-3
10^-5
SINGLE PULSE
10^-4
10^-3
10^-2
0.1
t₁, RECTANGULAR PULSE DURATION (S)
FIGURE 3. TRANSIENT THERMAL IMPEDANCE
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
1
10
4-343