IRFP244 Datasheet, PDF (5/7 Pages) Intersil Corporation – 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

IRFP244, IRFP245, IRFP246, IRFP247
Typical Performance Curves Unless Otherwise Specified (Continued)
25
PULSE DURATION = 80µs
V_GS = 10V
20
V_GS = 6.0V
15
V_GS = 5.5V
10
V_GS = 5.0V
5
V_GS = 4.5V
V_GS = 4.0V
0
0
2
4
6
8
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
V_DS ≥ 50V
PULSE DURATION = 80µs
10
T_J = 150^oC
T_J = 25^oC
1
0.1
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 80µs
2.0
1.5
V_GS = 10V
3.0
I_D = 10A
V_GS = 10V
2.4
1.8
1.0
1.2
0.5
V_GS = 20V
0.6
0
0
15
30
45
60
75
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
I_D = 250µA
1.15
1.05
3000
2400
1800
C_ISS
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1200
C_OSS
600
C_RSS
0
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5