IRFP244 Datasheet, PDF (2/7 Pages) Intersil Corporation – 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

IRFP244, IRFP245, IRFP246, IRFP247
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
IRFP244
IRFP245
IRFP246
IRFP247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V_DS
250
250
275
275
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . .V_DGR
250
250
275
275
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
15
14
15
14
A
T_C = 100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
9.7
8.8
9.7
8.8
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I_DM
60
56
60
56
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
±20
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . P_D
150
150
150
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
1.2
1.2
1.2
W/^oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . T_pkg
550
-55 to 150
300
260
550
-55 to 150
300
260
550
-55 to 150
300
260
550
mJ
-55 to 150
o_C
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRFP244, IRFP245
BV_DSS V_GS = 0V, I_D = 250µA (Figure 10)
250
-
-
V
IRFP246, IRFP247
275
-
-
V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRFP244, IRFP246
V_GS(TH)
I_DSS
I_D(ON)
V_GS = V_DS, I_D = 250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS
T_J =
= 0.8 x
125^oC
Rated
BV_DSS
,
V_GS
=
0V
V_DS > I_{D(ON) x} r_DS(ON)MAX, V_GS = 10V
(Figure 7)
2.0
-
4.0
V
-
-
25
µA
-
-
250
µA
15
-
-
A
IRFP245, IRFP247
14
-
-
A
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFP244, IRFP246
I_GSS
r_DS(ON)
V_GS = ±20V
V_GS = 10V, I_D = 10A (Figures 8, 9)
-
-
±100 nA
-
0.20 0.28
Ω
IRFP245, IRFP247
-
0.24 0.34
Ω
Forward Transconductance (Note 2)
g_fs
V_DS ≥ 50V, I_D = 10A (Figure 12)
6.7
11
-
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t_d(ON) V_DD = 125V, I_D ≈ 15A, R_G = 9.1Ω, V_GS = 10V,
-
R_L = 8Ω (Figures 17, 18) MOSFET Switching
t_r
Times are Essentially Independent of
-
Operating Temperature
t_d(OFF)
-
16
24
ns
67 100
ns
53
80
ns
Fall Time
t_f
-
49
74
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Q_g(TOT) V_GS = 10V, I_D = 15A, V_DS = 0.8 x Rated
-
39
59
nC
BV_DSS, I_G(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is Essentially Independent of
Q_gs
Operating Temperature
-
6.6
-
nC
Gate to Drain “Miller” Charge
Q_gd
-
20
-
nC
5-2