IRFP244 Datasheet, PDF (3/7 Pages) Intersil Corporation – 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

IRFP244, IRFP245, IRFP246, IRFP247
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
C_ISS
C_OSS
C_RSS
L_D
L_S
V_GS = 0V, V_DS = 25V, f = 1.0MHz
(Figure 11)
Measured fRom the
Drain Lead, 6mm
(0.25in) From Pack-
age to the Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Measured from The
L_D
Source Lead, 6mm
(0.25in) from the
G
Header to the Source
L_S
Bonding Pad
S
Junction to Case
Junction to Ambient
R_θJC
R_θJA
Free Air Operation
MIN TYP MAX UNITS
-
1300
-
pF
-
320
-
pF
-
69
-
pF
-
5.0
-
nH
-
12.5
-
nH
-
-
0.83 ^oC/W
-
-
30 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD
Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
I_{SDM Integral Reverse}
(Note 3)
P-N Junction Diode
G
MIN TYP
-
-
-
-
MAX
15
60
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
V_SD
T_J = 25^oC, I_SD = 15A, V_GS = 0V (Figure 13)
-
-
1.8
V
Reverse Recovery Time
t_rr
T_J = 25^oC, I_SD = 14A, dI_SD/dt = 100A/µs
150 300 640
ns
Reverse Recovered Charge
Q_RR
T_J = 25^oC, I_SD = 14A, dI_SD/dt = 100A/µs
1.6 3.4
7.2
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 4.0µH, R_G = 25Ω, peak I_AS = 15A. See Figures 15, 16.
5-3