IRF9240 Datasheet, PDF (5/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9240
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
I_D = 250µA
1.10
1.05
1.00
0.95
0.90
0.85
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1600
1200
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_ISS
800
400
00
C_OSS
C_RSS
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
80µs PULSE TEST
8
6
T_J = -55^oC
T_J = 25^oC
T_J = 125^oC
4
2
0
0
-10
-20
-30
-40
-50
I _D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
T_J = 150^oC
-10
T_J = 25^oC
-1.0
-0.1
-0.4 -0.6 -0.8
-1.0
-1.2 -1.4
-1.6 -1.8
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
-5
V_DS = -40V
V_DS = -100V
V_DS = -160V
-10
I_D = -11A
FOR TEST CIRCUIT
SEE FIGURES 19, 20
0
20
40
60
80
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-30