IRF9240 Datasheet, PDF (4/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9240
Typical Performance Curves Unless Otherwise Specified (Continued)
-100
10µs
-10
100µs
1ms
OPERATION IN THIS
10ms
AREA IS LIMITED
-1
BY r_DS(ON)
100ms
DC
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
-0.1-1
-10
-100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-1000
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-50
V_GS = -11V
-40
-30
-20
-10
V_GS = -10V
80µs PULSE TEST
V_GS = -9V
V_GS = -8V
V_GS = -7V
V_GS = -6V
V_GS = -5V
V_GS = -4V
0
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-20 _{80µs PULSE TEST}
V_GS = -10V
V_GS = -9V
-16
V_GS = -8V
V_GS = -7V
- 12
V_GS = -6V
-8
-4
V_GS = -5V
V_GS = -4V
00
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
0.8 ^{5µs PULSE TEST}
0.7
V_GS = -10V
0.6
0.5
0.4
0.3
V_GS = - 20V
0.2
0
0
-15
-30
-45
-60
-75
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 5µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
100
80µs PULSE TEST
V_DS ≥ I _D(ON) x r_DS(ON)MAX
-10
-1.0
125^oC
25^oC
-55^oC
-0.1
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
V_GS = -10V, I_D = -11A
2.0
1.5
1.0
0.5
0
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE
ON RESISTANCE vs JUNCTION TEMPERATURE
5-29