IRF9240 Datasheet, PDF (2/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9240
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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.I_D
.I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
aximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRF9240
-200
-200
-11
-7
-44
±20
125
1
790
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to T_J = 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
BV_DSS
V_GS(TH)
I_DSS
I_D(ON)
I_D = -250µA, V_GS = 0V, (Figure10)
V_GS = V_DS, I_D = -250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = -10V,
(Figure 7)
Gate to Source Leakage Current
On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
t_f
V_GS = ±20V
I_D = -6A, V_GS = -10V, (Figures 8, 9)
V_DS > I_D(ON) x r_DS(ON)MAX, I_D = -6A, (Figure 12)
V_DD = 1.00 x Rated BV_DSS, I_D ≈ 11A,
R_G = 9.1Ω, V_GS = 10V, (Figure 17, 18)
R_L = 17.5Ω for BV_DSS = 150V
R_L = 9.6Ω for BV_DSS = 200V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
L_D
V_GS = -10V, I_D = -11A, V_DS = 0.8 x Rated BV_DSS,
(Figures 14, 19, 20))
Gate Charge is Essentially Independent of
Operating Temperature
V_DS = -25V, V_GS = 0V, f = 1MHz, (Figure 11)
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the In-
ternal Devices
Inductances
D
Internal Source Inductance
L_S
Measured From the Source
Lead, 6mm (0.25in) From
L_D
the Flange and the Source
Bonding Pad
G
L_S
MIN
-200
-2
-
-
-11
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R_θJC
R_θJA
Typical Socket Mount
S
-
-
TYP MAX UNITS
-
-
V
-
-4
V
-
-25
µA
-
-250
µA
-
-
A
- ±100 nA
0.35 0.500 Ω
6
-
S
18
22
ns
45
68
ns
75
90
ns
29
44
ns
70
90
nC
55
-
nC
15
-
nC
1100 -
pF
375
-
pF
150
-
pF
5.0
-
nH
12.5
-
nH
-
1
o_C/W
-
62.5 ^oC/W
5-27