IRF9150 Datasheet, PDF (5/7 Pages) Intersil Corporation – -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

IRF9150
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5000
4000
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GS
3000
C_ISS
2000
1000
C_OSS
C_RSS
00
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
12
25^oC
9
150^oC
6
3
0
0
-10
-20
-30
-40
-50
I _D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
150^oC
1
25^oC
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I_D = -25A
-5
-10
-15
V_DS = -80V
V_DS = -50V
V_DS = -20V
-20
-25
0
20 40 60 80 100 120 140 160 180 200
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-24