IRF9150 Datasheet, PDF (2/7 Pages) Intersil Corporation – -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

IRF9150
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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I_D
I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Avalanche Current (Repetitive or Nonrepetitive) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_AR
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
IRF9150
-100
-100
-25
-18
-100
±20
150
1.2
1300
-25
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
A
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to T_J = 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
BV_DSS
V_GS(TH)
I_DSS
I_D(ON)
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
L_D
I_D = -250µA, V_GS = 0V, (Figure 10)
V_GS = V_DS, I_D = -250µA
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V T_C = 125^oC
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
V_GS = ±20V
I_D = -10A, V_GS = -10V (Figures 8, 9)
V_DS = -10V, I_D = -12.5 (Figure 12)
V_DD = -50V, I_D ≈ -25A, R_G = 6.8Ω, R_L = 2.0Ω, (Fig-
ures 17, 18) MOSFET Switching Times are Essen-
tially Independent of Operating Temperature
V_GS = -10V, I_D = -25A, V_DS = 0.8 x Rated BV_DSS
(Figures 14, 19, 20) Gate Charge is Essentially
Indpendent of Operating Temperature
V_DS = -25V, V_GS = 0V, f = 1MHz
(Figure 11)
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
Internal Source Inductance
L_S
Measured From the
L_D
Source Lead, 6mm
(0.25in) From the Flange
G
and the Source
L_S
Bonding Pad
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Free Air Operation
MIN
-100
-2
-
-
-25
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
-
-
V
-
-4
V
-
-25
µA
-
-250 µA
-
-
A
- ±100 nA
0.09 0.150 Ω
10
-
S
16
24
ns
110 160 ns
65 100 ns
46
70
ns
82 120 nC
14
-
nC
42
-
nC
2400 -
pF
850
-
pF
400
-
pF
5.0
-
nH
13
-
nH
-
0.83 ^oC/W
-
30 ^oC/W
5-21