IRF9150 Datasheet, PDF (4/7 Pages) Intersil Corporation – -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

IRF9150
Typical Performance Curves Unless Otherwise Specified (Continued)
100
10µs
10
OPERATION IN THIS AREA
IS LIMITED BY r_DS(ON)
100µs
1ms
T_C = 25^oC
T_J = MAX RATED
SINGLE PULSE
1
1
10
10ms
DC
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-50
PULSE DURATION = 80µs
V_GS = 10V
-40
V_GS = 8V
- 30
V_GS = 7V
- 20
V_GS = 6V
- 10
0
0
V_GS = 5V
V_GS = 4V
-1
-2
-3
-4
-5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
350
PULSE DURATION = 80µs
300
250
V_GS = -10V
200
150
100
V_GS = - 20V
50
0
0
-20
-40
-60
-80
-100
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
-100
V_GS = 14V
-80
PULSE DURATION = 80µs
V_GS = 12V
V_GS = 10V
-60
V_GS = 9V
-40
-20
0
0
V_GS = 4V
V_GS = 8V
V_GS = 7V
V_GS = 6V
V_GS = 5V
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
-100
PULSE DURATION = 80µs
V_DS ≤ -50V
-10
-1.0
125^oC
25^oC
-0.1
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2
V_GS = 10V, I_D = -25A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
5-23