IRF630 Datasheet, PDF (5/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF630, RF1S630SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2000
1600
1200
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD, C_DS
C_RSS = C_GD
C_OSS = C_DS + C_GD
800
C_ISS
400
C_OSS
C_RSS
0
1
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
6
55^oC
25^oC
4
125^oC
2
0
0
2
4
6
8
10
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
150^oC
10
25^oC
1
0
1
2
3
4
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 9A
15
V_DS = 40V
V2_D0_S = 100V
10
V_DS = 160V
IRF630, IRF632
5
0
0
8
16
24
32
40
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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