IRF630 Datasheet, PDF (2/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

IRF630, RF1S630SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRF630, RF1S630SM
200
200
9
6
36
±20
75
0.6
150
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
200
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 125^oC
-
I_D(ON) V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
9
I_GSS V_GS = ±20V
-
r_DS(ON) I_D = 5A, V_GS = 10V (Figure 8, 9)
-
g_fs
V_DS > I_D(ON) x r_DS(ON)MAX, I_D = 5A (Figure 12)
3
t_d(ON) V_DD = 90V, I_D ≈ 9A, R_GS = 9.1Ω, V_GS = 10V
-
t_r
R_L = 9.6Ω
MOSFET Switching Times are Essentially
-
t_{d(OFF) Independent of Operating Temperature}
-
t_f
-
Q_g(TOT) V_GS = 10V, I_D = 9A, V_DS = 0.8 x Rated BV_DSS
-
I_g(REF) = 1.5mA (Figure 14)
Q_gs
Gate Charge is Essentially Independent of
Operating Temperature
-
Q_gd
-
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz (Figure 11)
-
C_OSS
-
C_RSS
-
L_D
Measured From the
Modified MOSFET
-
Contact Screw on Tab to Symbol Showing the
Center of Die
Internal Devices
Measured From the Drain ^Inductances
-
Lead, 6mm (0.25in) From
D
Package to Center of Die
L_D
L_S
Measured From the
-
Source Lead, 6mm
G
(0.25in) From Header to
L_S
Source Bonding Pad
S
Thermal Resistance Junction to Case
R_θJC
-
Thermal Resistance Junction to Ambient
R_θJA Free Air Operation
-
TYP
-
-
-
-
-
-
0.25
4.8
-
-
-
-
19
10
9
600
250
80
3.5
4.5
7.5
-
-
MAX
-
4
25
250
-
±100
0.4
-
30
50
50
40
30
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
-
nC
-
nC
-
pF
-
pF
-
pF
-
nH
-
nH
-
nH
1.67 ^oC/W
80
o_C/W
4-203