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IRF630 Datasheet, PDF (3/7 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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IRF630, RF1S630SM
Source to Drain Diode Speciï¬cations
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse
D
P-N Junction Diode
G
MIN
TYP
MAX UNITS
-
-
9
A
-
-
36
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = 9A, VGS = 0V (Figure 13)
-
-
2
V
Reverse Recovery Time
trr
TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs
-
450
-
ns
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = 9A, dISD/dt = 100A/µs
-
3
-
µC
NOTES:
2. Pulse Test: Pulse width ⤠300µs, Duty Cycle ⤠2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 20V, starting TJ = 25oC, L = 3.37mH, RG = 50â¦, peak IAS = 9A.
Typical Performance Curves Unless Otherwise Speciï¬ed
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC RθJC + TC
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
4-204
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