IRF610 Datasheet, PDF (5/7 Pages) Intersil Corporation – 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

IRF610
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
320 C_RSS = C_GD
C_OSS = C_DS + C_GD
240
160
C_OSS
80
C_RSS
C_ISS
0
1
2
5
10
2
5
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
1.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.2 ^{VDS ≥ 50V}
T_J = 25^oC
0.9
T_J = 150^oC
0.6
PULSE DURATION = 80µs
100 _{DUTY CYCLE = 0.5% MAX}
T_J = 150^oC
T_J = 25^oC
10
0.3
0
0
1
2
3
4
5
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
1
0
0.4
0.8
1.2
1.6
2.0
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I_D = 3.2A
16
12
V_DS = 40V
V_DS = 100V
8
V_DS = 160V
4
0
0
2
4
6
8
10
Q_g, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
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