IRF610 Datasheet, PDF (2/7 Pages) Intersil Corporation – 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

IRF610
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRF610
200
200
3.3
2.1
8
±20
43
0.34
46
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV_DSS V_GS = 0V, I_D = 250µA (Figure 10)
V_GS(TH) V_DS = V_GS, I_D = 250µA
Zero Gate Voltage Drain Current
I_DSS
V_DS = Max Rating, V_GS = 0V
V_DS = Max Rating x 0.8, V_GS = 0V, T_J = 125^oC
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
I_D(ON)
I_GSS
r_DS(ON)
g_fs
t_d(ON)
t_r
t_d(OFF)
V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V (Figure 7)
V_GS = ±20V
V_GS = 10V, I_D = 1.6A (Figures 8, 9)
V_DS ≥ 50V, I_D = 1.6A (Figure 12)
V_DD = 100V, I_D ≈ 3.3A, R_G = 24Ω, R_L = 30Ω
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t_f
Q_g(TOT)
Q_gs
Q_gd
C_ISS
C_OSS
C_RSS
V_GS = 10V, I_D = 3.3A, V_DS = 0.8 x Rated BV_DSS,
I_g(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
V_GS = 0V, V_DS = 25V, f = 1MHz
(Figure 11)
Internal Drain Inductance
Internal Source Inductance
L_D
Measured From the
Modified MOSFET
Contact Screw on Tab to Symbol Showing the
Center of Die
Internal Device
Measured From the Drain
Lead, 6mm (0.25in) From
Inductances
D
Package to Center of Die
L_D
L_S
Measured From the Source
Lead, 6mm (0.25in) from
G
Header to Source Bonding
L_S
Pad
S
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Free Air Operation
MIN TYP MAX UNITS
200
-
-
V
2
-
4
V
-
-
25
µA
-
-
250 µA
3.3
-
-
A
-
- ±100 nA
-
1.0 1.5
Ω
0.8 1.3
-
S
-
8
12
ns
-
17
26
ns
-
13
21
ns
-
9
13
ns
-
5.3 8.2
nC
-
1.2
-
nC
-
3.0
-
nC
-
135
-
pF
-
60
-
pF
-
16
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
2.9 ^oC/W
-
-
80 ^oC/W
4-191